| Title | Grain boundary location control by patterned metal film in excimer laser crystallized polysilicon |
|---|---|
| Publication Type | Presentazione a Congresso |
| Year of Publication | 1999 |
| Authors | Mariucci, L., Carluccio R., Pecora A., Fortunato G., Massussi F., Foglietti V., Della Sala Dario, and Stoemenos J. |
| Conference Name | Diffusion and Defect Data Pt.B: Solid State Phenomena |
| Publisher | Scitec Publications Ltd., Zurich, Switzerland |
| Conference Location | Schwabisch Gmund, Ger |
| Keywords | Amorphous films, Amorphous silicon, Crystal growth, Crystallization, Excimer lasers, Excimer-laser crystallization, Grain boundaries, Polycrystalline materials, Semiconducting silicon, Semiconductor growth, Thin film transistors |
| Abstract | The control of the structural properties of polysilicon obtained by excimer laser crystallization has become of great importance to further develop the polysilicon thin-film transistors technology. In this work we have investigated a new approach to achieve a control of the lateral growth mechanism through opportune spatial modulation of the light intensity. Two different techniques, based on patterned reflective metal layers, have been used: 1) direct deposition of Cr or Al/Cr metal layers on top of the amorphous silicon film; 2) irradiation through a patterned mask in contact with the sample. |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032641744&partnerID=40&md5=ea26b7f19826625256e11a572971d545 |
| Citation Key | Mariucci1999175 |
