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Synthesis of silicon carbide thin films by ion beam sputtering

TitoloSynthesis of silicon carbide thin films by ion beam sputtering
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione1998
AutoriValentini, A., Convertino A., Alvisi Marco, Cingolani R., Ligonzo T., Lamendola R., and Tapfer Leander
RivistaThin Solid Films
Volume335
Paginazione80-84
ISSN00406090
Parole chiaveAmorphous films, Film growth, Ion beam sputtering, Microstructure, Optical properties, Phase transitions, Polycrystalline materials, Silicon carbide, Sputtering, Substrates, Synthesis (chemical), Thin films, X ray diffraction analysis, X ray photoelectron spectroscopy
Abstract

Synthesis of silicon carbide (SiC) films has been obtained by means of ion beam sputtering. The films have been grown by co-sputtering Si and C targets by means of two Ar-ion beams at substrate temperatures ranging between 30 and 700°C. Chemical, structural and optical analysis have been performed on the samples. The change from amorphous to polycrystalline phase and the relative improvement of the chemical and optical properties have been observed on films grown at 700°C. © 1998 Elsevier Science S.A. All rights reserved.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0032307127&partnerID=40&md5=416bf222496ee2c089ab58afb04b310b
Citation KeyValentini199880